| PART |
Description |
Maker |
| F20S6N-4100 |
20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET
|
|
| IPP50R045CP |
62 A, 500 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
INFINEON TECHNOLOGIES AG
|
| IPW60R045CP IPW60R045CP08 |
CoolMOS Power Transistor
60 A, 600 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
Infineon Technologies AG
Infineon Technologies A...
|
| BUZ345 BUZ345C67078-S3121-A2 |
Single-chip ZigBee® 802.15.4 solution
SIPMOS Power Transistor
Low Voltage MOSFETs - Power MOSFET, 100V, TO-218, RDSon=0.045 Ohm, 41A, NL
|
INFINEON[Infineon Technologies AG]
|
| H7N1004AB |
30 A, 100 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| PSMN045-80YS |
N-channel LFPAK 80 V 45 m standard level MOSFET 24 A, 80 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235
|
NXP Semiconductors N.V.
|
| APT20M45SVFR |
POWER MOS V 200V 56A 0.045 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| SML20W65 SML20B56 |
HIGH POWER TERMINATION 56 A, 200 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
TT electronics Semelab, Ltd.
Seme LAB
|
| 008500450 008500455 008500458 008500453 008500457 |
KK.045 SQ PIN LOOSE
|
Molex Electronics Ltd.
|
| TC0186A |
SAW Resonator 752.045 MHz SMD 3.8X3.8 mm
|
TAI-SAW TECHNOLOGY CO., LTD.
|
| EUAAS-14.045M |
CRYSTALS 50/100 0 70 SERIES 14.045MHZ ATCUT FUND HC-49/U QUARTZ CRYSTAL RESONATOR, 14.045 MHz
|
Ecliptek, Corp.
|
|
